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( ) EURO SPORTS Journal (VOL.4, NO.73) __EXCLUSIVE__

Pubblicato da elmimar su Gennaio 16, 2023
0

( ) EURO SPORTS Journal (VOL.4, NO.73) __EXCLUSIVE__


LINK >>>>> https://urloso.com/2sI2h4

( ) EURO SPORTS Journal (VOL.4, NO.73)

Gold Euro Airbox Mod Flash-Tune Interface (2012 Version)

The invention relates to a memory element having a memory layer deposited between two electrode layers; a storage state being realised by quantum mechanical tunneling current carriers between two electrodes which contact the memory layer.
In a memory operation of the existing so-called xe2x80x9cmonolayerxe2x80x9d memory type, a tunneling current or current carriers occurs through a layer of memory material (also called a memory layer or memory layer material) which is arranged between two electrodes, which contact the memory layer material. At a voltage applied between two electrodes, such a tunneling current is generated when a first electrode is also referred to as a control electrode, and a second electrode is also referred to as a reference electrode. As a result, the memory layer material is in a first state, where it does not conduct a current, or a xe2x80x9c1xe2x80x9d state, and in a second state, where it conducts current, or a xe2x80x9c0xe2x80x9d state. The switching of the memory layer material from one state to another is performed by the application of a suitable voltage. An N-type memory layer is referred to here as the memory layer material, and includes an element of the first conductive type of an N-type semiconductor. Furthermore, when the memory layer material conducts current, it is referred to as a xe2x80x9cconductorxe2x80x9d, and likewise when the memory layer material does not conduct current, it is referred to as an xe2x80x9cinsulatorxe2x80x9d.
The parameter xe2x80x9cxcex1xe2x80x9d is a measure of the xe2x80x9cdistancexe2x80x9d of the memory layer, which is designed to be smaller than the distance in which the current carriers are stored or generated (in the material of the memory layer), and which ideally has an imaginary value of zero. In such a memory device, the two electrodes are the control electrode and the reference electrode, which are arranged with a defined distance apart, and which are referred to as the control electrode and the reference electrode, respectively. According to the geometric structure of the memory, as well as their material properties, a potential difference

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